Manual of product A2F667-E4GX2
Editorial note
The Buffalo A2F667-E4GX2 is a product that stands out for its 8 GB of internal memory, providing sufficient capacity to store a large amount of data and applications. This allows for smooth and efficient use for everyday tasks. With a frequency of 667 MHz and a configuration of 2 x 4 GB, this model ensures acceptable performance for less resource-intensive applications and games. However, some drawbacks must be taken into account. DDR2 memory, while functional, is now considered outdated compared to current standards such as DDR4 or DDR5. This technology may limit performance, especially for advanced users or those using demanding software. Additionally, the 8 GB capacity may not be enough to run multiple programs simultaneously, causing slowdowns. In terms of compatibility, the support for 240-pin DIMM memory is an advantage, but it may also restrict upgrade options with recent motherboards that adopt different formats. Thus, while the value for money is reasonable, it may not meet the expectations of users looking for maximum performance and expansion capabilities. In summary, the Buffalo A2F667-E4GX2 is suitable for basic use, but it is important to consider its limitations in terms of technology and performance for more intensive uses.Score details
User experience
The user experience is generally positive thanks to the 8 GB internal memory, but the DDR2 memory may seem outdated compared to modern standards.
Performance
The performance is satisfactory for basic tasks, but the 667 MHz frequency and CAS latency of 5 may limit efficiency for more demanding applications.
Value for money
The value for money is fair, but the 8 GB capacity may not be sufficient for advanced users, and DDR2 technology is outdated.
compatibility
Compatibility with the 240-pin DIMM memory support is an advantage, but it may also restrict upgrade options with recent motherboards.
Usability
Usage remains smooth under normal conditions, but slowdowns may occur when running multiple demanding programs simultaneously.
Advantages
8 GB of internal memory
Frequency of 667 MHz
Configuration 2 x 4 GB
Compatible with 240-pin DIMM
CAS latency of 5
Disadvantages
DDR2 memory obsolete compared to current standards
Frequency of 667 MHz, limited performance
8 GB insufficient for advanced users
Limited compatibility with certain motherboards
CAS latency of 5, average performance
Technical Specifications A2F667-E4GX2
General Information
-
ModelA2F667-E4GX2
-
Brand
-
Category
-
Type
-
SKU1027898
-
MPN1027898
Features
-
Internal memory8 GB
-
Type of internal memoryDDR2
-
Memory support240-pin DIMM
-
Memory frequency667 MHz
-
CAS Latency5
-
Memory layout (modules x dimensions)2 x 4 GB
-
Voltage memory1.8 V
Frequently Asked Questions
Is the manual for the Buffalo A2F667-E4GX2 available in French?
Similar products
More product categories from brand Buffalo
More product types from brand Buffalo
Presentation of product A2F667-E4GX2 specifications from brand Buffalo
General Information
The Buffalo A2F667-E4GX2 is a product from the Buffalo brand, known for its reliability and innovation in the electronics sector. This model, designated A2F667-E4GX2, is designed to deliver optimal performance, thereby enhancing the user experience. The associated EAN code, 747464118864, allows for precise identification of the product within distribution systems.
Features
This model is equipped with an internal memory of 8 GB, allowing for substantial storage of data and applications, contributing to smooth and efficient operation. The memory is of type DDR2, enabling quick access to stored information, although it is considered less modern compared to current standards.
The Buffalo A2F667-E4GX2 uses a 240-pin DIMM memory module, ensuring optimal performance while remaining compatible with various systems. With a frequency of 667 MHz, this product provides adequate performance for common applications, although this may limit its effectiveness with highly demanding software.
The CAS latency of 5 is a key parameter that influences the speed of the memory, although some users may find this insufficient in high-performance contexts. Additionally, the configuration of 2 x 4 GB helps optimize overall performance, ensuring smooth usage. The operating voltage is 1.8 V, ensuring compatibility with modern systems.
